The NPN transistor operating at temperature T = 300 K is biased at collector current of 1 mA. Now, the base emitter voltage of the transistor is increased by 0.026 V. Assuming the parameters of device as n = 1, kT/q = 26mV Intrinsic carrier concentration = 1.5 * 10^10/cm^3 and q = 1.6 * 10^(-19( C, The new collector current of transistor = ?
- Register now to explore your dream career.
- Explore Careers360’s predictive tools for better decision making.
- Know about latest happenings in education sphere (Management, Engineering, Medicine & Allied, Degree Programs, Study Abroad and Professional courses).
- Discover and compare more about colleges and courses.