The NPN transistor operating at temperature T = 300 K is biased at collector current of 1 mA. Now, the base emitter voltage of the transistor is increased by 0.026 V. Assuming the parameters of device as n = 1, kT/q = 26mV Intrinsic carrier concentration = 1.5 * 10^10/cm^3 and q = 1.6 * 10^(-19( C, The new collector current of transistor = ?
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